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Datasheet CJ2302S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CJ2302S | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2302S N-Channel 20-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: S2U
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless |  JCST | mosfet |
CJ2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CJ201NL | NPN Transistor CJ201NL
SOT-23 Plastic-Encapsulate Transistors
CJ201NL TRANSISTOR (NPN)
SOT–23
FEATURES z High Collector Current Capability z Low Collector-emitter Saturation Voltage z High Efficiency Leading to Less Heat Generation z Reduced PCB Requirements z Alternatived Effectively to MOSFETS in Specific  ZPSEMI transistor | | |
| 2 | CJ201NL | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
CJ201NL TRANSISTOR (NPN)
SOT–23
FEATURES z High Collector Current Capability z Low Collector-emitter Saturation Voltage z High Efficiency Leading to Less Heat Generation z Reduced PCB Requirements z Altern JCST transistor | | |
| 3 | CJ2045 | Dual 40V complementary transistors JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6LPlastic-Encapsulate Transistors
CJ2045 Dual 40V complementary transistors
FEATURES z 40V complementary device z High hFE z Mounting cost and area can be cut in half
MARKING: 2045
EQUIVALENT CIRCUIT
SOT-23-6L
Tr1 NPN and Tr2 PNP Absolute JCST transistor | | |
| 4 | CJ2101 | P-Channel MOSFET CJ2101
SOT-323 Plastic-Encapsulate MOSFETS
CJ2101 P-Channel MOSFET
FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life
SOT-323
1. GATE 2. SOURCE 3. DRAIN
APPLICATIONS z High Side Load Switch z Charging Circuit z Single Cell Battery Applications such as Cell Phones, Digital C ZPSEMI mosfet | | |
| 5 | CJ2101 | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
CJ2101 P-Channel 8-V(D-S) MOSFET
FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life
SOT-323
1. GATE 2. SOURCE 1 3. DRAIN
2
APPLICATIONS z High Side Load Switch z Charging Circuit z Single JCST mosfet | | |
| 6 | CJ2101-G | MOSFET, Transistor MOSFET
CJ2101-G
RoHS Device
V(BR)DSS -20V
RDS(on)MAX 100mΩ @ -4.5V 140mΩ @ -2.5V 210mΩ @ -1.8V
ID -1.4A
Features
- P-Channel MOSFET - Leading trench technology for low RDS(on)
extending battery life
Mechanical data
- Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750,
meth  Comchip mosfet | | |
| 7 | CJ2102 | N-Channel 20-V(D-S) MOSFET CJ2102
SOT-323 Plastic-Encapsulate MOSFETS
CJ2102 N-Channel 20-V(D-S) MOSFET
FEATURE z TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: TS2
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Cont ZPSEMI mosfet | | |
| 8 | CJ2102 | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
CJ2102 N-Channel 20-V(D-S) MOSFET
FEATURE z TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: TS2
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Dr JCST mosfet | | |
| 9 | CJ2301 | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2301 P-Channel 20-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: S1
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unles JCST mosfet | |
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