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Datasheet CEB16N10 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1CEB16N10N-Channel Enhancement Mode Field Effect Transistor

CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO
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transistor
2CEB16N10LN-Channel Enhancement Mode Field Effect Transistor

CEP16N10L/CEB16N10L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-
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transistor


CEB Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1CEB01N6N-Channel Enhancement Mode Field Effect Transistor

CEP01N6/CEB01N6 CEI01N6/CEF01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 650V RDS(ON) 15Ω 15Ω 15Ω 15Ω ID 1A 1A 1A 1A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and cur
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datasheet CEB01N6 pdf
2CEB01N65N-Channel Enhancement Mode Field Effect Transistor

CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP01N65 CEB01N65 CEF01N65 VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and
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datasheet CEB01N65 pdf
3CEB01N6GN-Channel Enhancement Mode Field Effect Transistor

CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6G CEB01N6G CEF01N6G VDSS 600V 600V 600V RDS(ON) 9.3Ω 9.3Ω 9.3Ω ID @VGS 1A 10V 1A 10V 1A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capabili
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datasheet CEB01N6G pdf
4CEB02N6N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

CEP02N6/CEB02N6 4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS a Symbol Condition Min Typ Max Unit 250 50 30 1.5 PF PF PF VDS =25V, VGS = 0V
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datasheet CEB02N6 pdf
5CEB02N65AN-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65A CEB02N65A CEF02N65A VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V CEP02N65A/CEB02N65A CEF02N65A PRELIMINARY Super high dense cell design for extremely low RDS(ON). High power and c
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datasheet CEB02N65A pdf
6CEB02N65GN-Channel Enhancement Mode Field Effect Transistor

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65G CEB02N65G CEF02N65G VDSS 650V 650V 650V RDS(ON) 5.5Ω 5.5Ω 5.5Ω ID @VGS 2A 10V 2A 10V 2A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing ca
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datasheet CEB02N65G pdf
7CEB02N6AN-Channel Enhancement Mode Field Effect Transistor

CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON)
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datasheet CEB02N6A pdf



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