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Datasheet C5686 Equivalent ( PDF ) - Data |
| N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
| 1 | C5686 | NPN Transistor, 2SC5686 Power Transistors
2SC5686
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
- Features
(2.0)
High breakdown voltage: VCBO ≥ 2 000 V High-speed switching: tf < 200 ns Wide safe operation area
26.5±0.5
(23.4)
5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5
5.5±0.3
5˚ 5˚
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 Panasonic |
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C56 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | C5604 | NPN Transistor, 2SC5604
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5604
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD
FEATURES
High-gain transistor for buffer amplifier : S21e 2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GH- fT = 25 GH- “UHS0” (Ultra High Speed Process)
|  NEC |
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| 2 | C5609 | NPN Transistor, 2SC5609
Transistors
2SC5609
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SA2021
I Features
High foward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
I Absolute Maximum
|  Panasonic Semiconductor |
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| 3 | C5610 | NPN Transistor, 2SC5610
Ordering number:ENN6367
PNP, NPN Epitaxial Planar Silicon Transistors
2SA2022, 2SC5610
DC, DC Converter Applications
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation vol
|  Sanyo Semicon Device |
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| 4 | C5611 | NPN Transistor, 2SC5611
w w w Ordering . D a t number:ENN6336 a S h e e t 4 U . c o m
PNP, NPN Epitaxial Planar Silicon Transistors
2SA2023, 2SC5611
60V , 5A High-Speed Switching Applications
Applications
· Various inductance lamp drivers for electrical equipment. · Inverters, converters (strobes, flash, fluorescent l
| Sanyo Semicon Device |
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| 5 | C5612 | NPN Transistor, 2SC5612
2SC5612
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5612
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
l High Voltage l Low Saturation Voltage l High Speed
: VCBO = 2000 V : VCE (sat) = 3 V (Max.) : tf = 0.15 s (Typ.)
Unit: mm
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector
|  Toshiba Semiconductor |
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| 6 | C5617 | NPN SILICON RF TRANSISTOR
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5617
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
FEATURES NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GH- S21e 2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GH- 3-pin lead-less minimold package
ORDERING INFORMATIO
| NEC |
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| 7 | C5622 | NPN Transistor, 2SC5622
Power Transistors
2SC5622
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5±0.5
(10.0)
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
(2.0)
High breakdown voltage: 1 500 V High-speed switching Wide area of safe operation (ASO)
26.5±0.5
(23.4)
I Features
5˚ (
| Panasonic Semiconductor |
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