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Datasheet C5100 Equivalent ( PDF ) - Transistor |
| N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
| 1 | C5100 | Silicon NPN Triple Diffused Planar Transistor 2SC5100
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5100 160 120 6 8 3 75(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC5100 10max 10max 120min 50min 0.5max 20typ 200typ V MHz
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(B
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 Sanken electric |
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C51 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | C5100 | Silicon NPN Triple Diffused Planar Transistor
2SC5100
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5100 160 120 6 8 3 75(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC5100 10max
| Sanken electric |
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| 2 | C5101 | NPN Transistor, 2SC5101
2SC5101
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5101 200 140 6 10 4 80(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC5101 10ma
| Sanken electric |
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| 3 | C5103 | NPN Transistor, 2SC5103
2SC5103
Transistors
High speed switching transistor (60V, 5A)
2SC5103
!Features 1) Low VCE(sat) (Typ. 0.15V at IC , IB = 3 , 0.15A) 2) High speed switching (tf : Typ. 0.1 s at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. !External dimensions (Units : mm)
0.75
5.5
|  ROHM Electronics |
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| 4 | C5106 | NPN Transistor, 2SC5106
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5106
2SC5106
For VCO Application
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation J
|  Toshiba |
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| 5 | C5108 | NPN Transistor, 2SC5108
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5108
2SC5108
For VCO Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dis
| Toshiba |
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| 6 | C511 | 8-Bit CMOS Microcontroller
Microcomputer Components
8-Bit CMOS Microcontroller
C511, C511A C513, C513A C513A-H
Data Sheet 06.96
Data Sheet C511, C511A, C513, C513A, C513A-H Revision History : Current Version : 06.96 Previous Releases : Page Several 41 02.96, 05.95 Subjects (changes since last revision) Corrections of text
|  Siemens |
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| 7 | C5110 | NPN Transistor, 2SC5110
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5110
2SC5110
For VCO Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dis
| Toshiba |
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