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Datasheet C251 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | C251 | UPC251 |
![]() NEC |
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2 | C251 | Bipolar Analog Integrated Circuits
85
14 10.16 MAX.
4.31 MAX.
0.9 MIN.
7.62 6.4
5.08 MAX.
0.51 MIN. 3.2±0.3
1.4 MIN. 0.50±0.10
2.54 1.27 MAX.
0.25 M
0.25+ 00..0150
0 15˚ P8C-100-300B, C-1
85
1
1.59±0.21 1.49
5.2+ 00..1270
4
3° + 73°°
6.5 ±0.3 4.4±0.15
S
0.42
+0.08 0.07
0.1± 0.1
0.78 MAX. 1.27
0.12 M
0.6 ± 0.2
0.17
+0.08 0.07
1.1±0.2 0.10 S
S8GM-50-225B-5
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![]() NEC |
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3 | C2510 | NPN Transistor, 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2510
2SC2510
2~30MH- SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE)
l Specified 28V, 28MH- Characteristics
l Output Power
: Po = 150WPEP (Min.)
l Power Gain
: Gp = 12.2dB (Min.)
l Collector Efficiency
: ηC = 35% (Min.)
l Intermodulation Distortion: IMD = 30dB (Max.)
Unit in mm
MAXIMUM RATINGS (Tc = 25°C)
CHAR
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![]() Toshiba |
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4 | C2512B80C1600-1100 | Diode, Rectifier |
![]() American Micro semiconductor |
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5 | C2516 | Centillium ADSL IC / Central Office applications Meets requrements of IEC60950
C2516
Product Description
EIA date code and lot code
REV
C
Centillium ADSL IC, Central Office applications Meets requrements of IEC60950 for supplementary insulation, 250V working voltage
Customer Terminal #1 Indicator COEV C2516 XXXXX [12.24 MAX] 0.482 MAX
9.50 .374 0.80 .031 13.50 .531
A
Coplanar with surface A +0.006", -0.000"
1 8 7 6 5
[9.91 MAX] 0.390 MAX
2 3 4
[12.29 MAX] 0.484 MAX
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![]() Tyco Electronics |
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C25 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | C25 | Uncoated Metallized Polyester Film Capacitor
RoHS
Compliant
SPECIFICATION FOR APPROVAL
File No.: Q, FRK 0.GS.E.C25-E08
Product Name Product Type Product Code
Customer Customer Code Issue Date
Uncoated Metallized Polyester Film Capacitor(Stacked version) C25(CL25 Series)
2014-10
® Xiamen Faratronic Co. Ltd.
represented by
ALFATEC GmbH &
| ![]() Xiamen Faratronic |
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2 | C2500 | NPN Transistor, 2SC2500
2SC2500
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2500
Strobe Flash Applications Medium-Power Amplifier Applications
Unit: mm
High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2
| ![]() Toshiba |
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3 | C2506B40C1600-1100 | Diode, Rectifier
| ![]() American Micro semiconductor |
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4 | C250R500P | Microwave Carbon Rod Resistors
__ Microwave Carbon Rod Resistors
_ MECHANICAL SPECIFICATIONS
Substrate: Alumina or Beryllium Oxide Ceramic (Note: Letter "P" Denotes Beryllium Oxide.)
Std. Tolerance: Standard Resistance Tolerance ± 2% at 25°C Terminals:
Terminal Areas are Nickel, Tin Plated which reduces oxidation thus provid
| ![]() Component General |
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5 | C250R750P | Microwave Carbon Rod Resistors
__ Microwave Carbon Rod Resistors
_ MECHANICAL SPECIFICATIONS
Substrate: Alumina or Beryllium Oxide Ceramic (Note: Letter "P" Denotes Beryllium Oxide.)
Std. Tolerance: Standard Resistance Tolerance ± 2% at 25°C Terminals:
Terminal Areas are Nickel, Tin Plated which reduces oxidation thus provid
| ![]() Component General |
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6 | C251 | UPC251
| ![]() NEC |
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7 | C251 | Bipolar Analog Integrated Circuits
85
14 10.16 MAX.
4.31 MAX.
0.9 MIN.
7.62 6.4
5.08 MAX.
0.51 MIN. 3.2±0.3
1.4 MIN. 0.50±0.10
2.54 1.27 MAX.
0.25 M
0.25+ 00..0150
0 15˚ P8C-100-300B, C-1
85
1
1.59±0.21 1.49
5.2+ 00..1270
4
3° + 73°°
6.5 ±0.3 4.4±0.15
S
0.42
+0.08 0.07
0.1± 0
| ![]() NEC |
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Número de pieza | Descripción | Fabricantes | |
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