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Datasheet BZX84B5V1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZX84B5V1 | Zener Diode, Rectifier JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BZX84B2V4-BZX84B39 ZENER DIODES
FEATURES z Planar Die Construction z 300mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power Dissipation
SOT-23
MAXMUM RATINGS(Ta=25℃ u |  JCET | diode |
| 2 | BZX84B5V1 | Zener Diodes MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
Planar Die construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes
BZX84C2V4 |  MCC | diode |
| 3 | BZX84B5V1 | Surface mount Silicon Planar Zener Diodes BZX84B2V4 ... BZX84B47 (300 mW)
BZX84B2V4 ... BZX84B47 (300 mW)
Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage
Version 2014-01-03
Power dissipation – Verlustleistung
2.9 ±0.1 0.4
3
Type Code
1
1.9
2
1.1
2.5 max 1.3 ±0.1
Repetitive pea |  Diotec | diode |
| 4 | BZX84B5V1 | Silicon Zener Diode, Rectifier BZX84B…Series
SILICON PLANAR ZENER DIODES
This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand he |  SEMTECH | diode |
| 5 | BZX84B5V1 | 350mW SURFACE MOUNT PRECISION ZENER DIODE Features
2% Tolerance on VZ 350mW Power Dissipation Zener Voltages from 2.7V - 39V Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standa |  Diodes | diode |
| 6 | BZX84B5V1 | Small Signal Zener Diodes www.vishay.com
BZX84-Series
Vishay Semiconductors
Small Signal Zener Diodes
3
12
20421
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom. Test current IZT VZ specification Int. construction
2.4 to 75 2; 5
Pulse current Single
UNIT V mA
FEATURES
• Silicon planar Zener diodes
• The Z |  Vishay | diode |
| 7 | BZX84B5V1 | SURFACE MOUNT 350mW SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS BZX84C2V4 THRU BZX84C47 SURFACE MOUNT 350mW SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR BZX84C2V4 Series are surface mount silicon Zener diodes. These high quality voltage regulating diodes are designed for use in industrial, |  Central Semiconductor Corp | diode |
| 8 | BZX84B5V1-V | Small Signal Zener Diodes BZX84-V-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
3
1
2
20421
• These diodes are also available in other case styles and other configurations including: the SOD-123 case with type designation BZT52 series, the zener diode common anode configuration in the | Vishay | diode |
| 9 | BZX84B5V1LT1 | Zener Voltage Regulators BZX84B4V7LT1, BZX84C2V4LT1 Series Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for |  ON Semiconductor | regulator |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju  COS diode | | |
| 2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 8 | BZX13 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 9 | BZX15 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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