Datasheet BZX79B47 Equivalent ( PDF ) - Diode

BZX79 SERIES SILICON PLANAR ZENER DIODES DO-35 min. 1.083 (27.5) FEATURES The Zener voltages are graded according to the international E 24 standard. Higher Zener voltages and 1% tolerance available on request. max. .150 (3.8) max. .079 (2.0) Diodes available in these tolerance series: ±2% BZX79-B ±3% BZX79-F ±5% BZX79-C Cathode Mark min. 1.083 (27.5) max. .020 (0.52) MECHANICAL DATA C

Small Signal Product BZX79B2V4 thru BZX79B75 Taiwan Semiconductor Hermetically Sealed Glass Zener FEATURES - Wide zener voltage range selection: 2.4V to 75V - Through-hole device type mounting - Hermetically sealed glasss - Compression bonded construction - Solder hot dip tin (Sn) lead finish - Pb free and RoHS compliant - All external surfaces are corrosion resistant and leads are readily sold

BZX79B Series VZ : 2.4 to 75V PD : 500mW FEATURES : Higher zener voltages available on request. Standard zener voltage tolerance is ± 2% Other tolerances are available upon request. Pb , RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g ZENER DIODES DO - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) m

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju