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Datasheet BZX79B47 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BZX79B47Zener Diode, Rectifier

BZX79B Series VZ : 2.4 to 75V PD : 500mW FEATURES : • Higher zener voltages available on request. • Standard zener voltage tolerance is ± 2% • Other tolerances are available upon request. • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g ZENER DIODES DO - 35 G
EIC
EIC
diode
2BZX79B47Silicon Zener Diode, Rectifier

BZX79 SERIES SILICON PLANAR ZENER DIODES DO-35 min. 1.083 (27.5) FEATURES The Zener voltages are graded according to the international E 24 standard. Higher Zener voltages and 1% tolerance available on request. max. .150 (3.8) max. ∅.079 (2.0) Diodes available in these tolerance series: ±2% B
General Semiconductor
General Semiconductor
diode
3BZX79B47Hermetically Sealed Glass Zener

Small Signal Product BZX79B2V4 thru BZX79B75 Taiwan Semiconductor Hermetically Sealed Glass Zener FEATURES - Wide zener voltage range selection: 2.4V to 75V - Through-hole device type mounting - Hermetically sealed glasss - Compression bonded construction - Solder hot dip tin (Sn) lead finish - P
Taiwan Semiconductor
Taiwan Semiconductor
data


BZX Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
diode
2BZX10Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS
diode
3BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
diode
4BZX11Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS
diode
5BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
diode
6BZX12Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS
diode
7BZX13Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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