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Datasheet BZX55B30 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BZX55B30Silicon Zener Diode, Rectifier

BZX55B SILICON PLANAR ZENER DIODES Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Max. 0.45 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Glass Case DO-34 Dimensi
SEMTECH
SEMTECH
diode
2BZX55B30Zener Diode

Small Signal Product BZX55B2V4 thru BZX55B75 Taiwan Semiconductor 2% Tolerance Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of ± 2% - Hermetically sealed glasss - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Taiwan Semiconductor
Taiwan Semiconductor
diode
3BZX55B30SILICON ZENER DIODES

BZX55B2V0 ~ BZX55B100 VZ : 2.0 - 100 Volts PD : 500 mW SILICON ZENER DIODES DO - 35 0.079(2.0 )max. 1.00 (25.4) min. FEATURES : * Complete 2.0 to 100 Volts * High surge current capability 0.150 (3.8) max. * High peak reverse power dissipation * High reliability * Low leakage current 0.020 (0.
EIC
EIC
diode
4BZX55B30Small Signal Zener Diodes

www.vishay.com BZX55-Series Vishay Semiconductors Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. 2.4 to 75 Test current IZT 2.5; 5 VZ specification Pulse current Int. construction Single UNIT V mA FEATURES • Very sharp reverse characteristic • Low
Vishay
Vishay
diode
5BZX55B30Silicon Epitaxial Planar Z-Diodes

BZX55B... Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D D Very sharp reverse characteristic Low reverse current level Low noise Very high stability Available with tighter tolerances VZ–tolerance ± 2% Applications Voltage stabilization 94 9367 Absolute Maximum Rating
Vishay Telefunken
Vishay Telefunken
diode


BZX Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
datasheet BZX10 pdf
2BZX10Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS
datasheet BZX10 pdf
3BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
datasheet BZX11 pdf
4BZX11Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS
datasheet BZX11 pdf
5BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
datasheet BZX12 pdf
6BZX12Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS
datasheet BZX12 pdf
7BZX13Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
datasheet BZX13 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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