Datasheet BZX39 Equivalent ( PDF ) - Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj TStg Value 500 175 -65~175 Unit mW C C Type

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w w .D t a S a 500 175 -65~175 e h Unit mW C C 0.5Max Type Color Code DO-35 Black 26.0Min A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX399 series Voltage regulator diodes Product speci cation 1999 Jun 04 Philips Semiconductors Product speci cation Voltage regulator diodes FEATURES Total power dissipation: max. 300 mW Tolerance: ±5% Working voltage range: nom. 1.8 to 43 V (E24 range) Improved IZ, VZ characteristic at low currents (IZ = 50 A). This results in a

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX399 series Voltage regulator diodes Product speci cation 1999 Jun 04 Philips Semiconductors Product speci cation Voltage regulator diodes FEATURES Total power dissipation: max. 300 mW Tolerance: ±5% Working voltage range: nom. 1.8 to 43 V (E24 range) Improved IZ, VZ characteristic at low currents (IZ = 50 A). This results in a

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX399 series Voltage regulator diodes Product speci cation 1999 Jun 04 Philips Semiconductors Product speci cation Voltage regulator diodes FEATURES Total power dissipation: max. 300 mW Tolerance: ±5% Working voltage range: nom. 1.8 to 43 V (E24 range) Improved IZ, VZ characteristic at low currents (IZ = 50 A). This results in a