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Datasheet BUZ60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BUZ60 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 51
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 51
VDS
1000 V
ID
3.4 A
RDS(on)
4Ω
Package TO-220 AB
Ordering Code C67078-S1344-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 3.4 Unit A
ID ID |
 Siemens Semiconductor Group |
 |
| 4 | BUZ60 | 5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET |
 Intersil Corporation |
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| 3 | BUZ60 | SIPMOS Power Transistor |
 Infineon Technologies AG |
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| 2 | BUZ60B | main ratings BUZ60
Semiconductor
Data Sheet
October 1998
File Number 2260.1
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
Features
• 5.5A, 400V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.000Ω (BUZ60 field effect transistor designed for applications such as • SO |
Siemens Semiconductor Group |
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