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Datasheet BUX12 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BUX12 | NPN MULTI - EPITAXIAL POWER TRANSISTOR BUX12
MECHANICAL DATA Dimensions in mm(inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
NPN MULTI - EPITAXIAL POWER TRANSISTOR
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17.15 (0.675) | Seme LAB | transistor |
2 | BUX12 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUX12
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed ·High reliability APPLICATIONS ·Motor control ·Power switching circuits
PINNING(see fig.2) PIN 1 2 3 Base Emit | SavantIC | transistor |
3 | BUX12 | HIGH POWER TRANSISTOR NPN BUX12 HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR
The BUX12 is silicon multiepitaxial planar NPN transistors in Jedec TO-3. They are intended for use in switching and linear appications in military and industrial equipment. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO VCBO VEBO | Comset Semiconductors | transistor |
4 | BUX12 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUX12
DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability
APPLICATIONS ·Power switching circuits ·Motor control
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO | Inchange Semiconductor | transistor |
5 | BUX12 | BJT | New Jersey Semiconductor | data |
6 | BUX12P | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX12P
DESCRIPTION ·Low Collector Saturation Voltage ·High Switching Speed ·High Current Current Capability
APPLICATIONS ·Power switching circuits ·Motor control
Absolute maximum ratings(Ta=25℃)
SYMBOL
PAR | Inchange Semiconductor | transistor |
BUX Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BUX10 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR SILICON MULTI-EPITAXIAL NPN TRANSISTOR
BUX10
• High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
160V
VCEX
Semelab transistor | | |
2 | BUX10 | HIGH POWER NPN SILICON TRANSISTOR ® BUX10
HIGH POWER NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED
APPLICATIONS s MOTOR CONTROL s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION The BUX10 is a silicon Multi-Epitaxial Planar NPN transistor in STMicroelectronics transistor | | |
3 | BUX10 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUX10
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·Motor control ·Linear and switching industrial equipment
PINNING(see fig.2) PIN 1 2 3 Base Emitte SavantIC transistor | | |
4 | BUX10 | Trans GP BJT NPN 125V 25A 3-Pin(2+Tab) TO-3 Bag New Jersey Semiconductor data | | |
5 | BUX10A | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX10A
DESCRIPTION ·High Switching Speed ·High Current Capability
APPLICATIONS ·Designed for control amplifiers and power switching circuits,
such as converters, inverters, switching regulators, and switching-con Inchange Semiconductor transistor | | |
6 | BUX10P | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX10P
DESCRIPTION ·High Switching Speed ·High Current Capability
APPLICATIONS ·Motor control ·Linear and switching industrial equipment
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCEX VCEO
Co Inchange Semiconductor transistor | | |
7 | BUX10X | NPN MULTI - EPITAXIAL POWER TRANSISTOR BUX10X
MECHANICAL DATA Dimensions in mm(inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
NPN MULTI - EPITAXIAL POWER TRANSISTOR
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17.15 (0.675 Seme LAB transistor | | |
8 | BUX11 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUX11
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in switching and linear applications
PINNING(see fig.2) PIN 1 2 3 DESCRIPTION Base Emitter SavantIC transistor | | |
9 | BUX11 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11
• • • • High Current Capability. Hermetic TO3 Metal package. Designed For Switching and Linear Applications Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO VCEX VCEO VEBO IC ICM IB PD TJ Tstg Collect Seme lab transistor | |
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Número de pieza | Descripción | Fabricantes | |
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