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Datasheet BUV39 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | BUV39 | Bipolar NPN Device www.DataSheet.co.kr
BUV39
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.19 |
 Seme LAB |
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| 1 | BUV39 | Silicon NPN Power Transistor www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV39
DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 7.5A ·High Switching Speed
APPLICATIONS ·Designed for high current, high speed, high power applications.
Abs |
 Inchange Semiconductor |
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