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Datasheet BUV24 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BUV24 | NPN Silicon Low Frequency High Power Switching Transistor BUV20,BUV21,BUV22,BUV23,BUV24
NPN Silicon Low Frequency High Power Switching Transistor
Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for |
 ETC |
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| 2 | BUV24 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV24
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V (Max.)@IC= 6A ·High Power Dissipation ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min.)
APPLICATIONS ·Designed for use in power |
 Inchange Semiconductor |
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| 1 | BUV24 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BUV24
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max |
 Seme LAB |
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