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Datasheet BUV23 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BUV23 | NPN Silicon Low Frequency High Power Switching Transistor BUV20,BUV21,BUV22,BUV23,BUV24
NPN Silicon Low Frequency High Power Switching Transistor
Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for |
 ETC |
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| 4 | BUV23 | 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUV23/D
SWITCHMODE Series NPN Silicon Power Transistor
. . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A • Low VCE(sat), VCE(sat) max. = 0.8 V at IC = 8 A • Ver |
 Motorola Inc |
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| 3 | BUV23 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV23
DESCRIPTION ·With TO-3 package ·High DC current gain ·Very fast switching times ·Low collector saturation voltage APPLICATIONS ·Designed for high current,high speed and high power applicati |
 SavantIC |
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| 2 | BUV23 | Bipolar NPN Device BUV23
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
1.47 (0.058) 1.60 (0.063)
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17. |
 Seme LAB |
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