DataSheet.es    

Datasheet BUV18 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BUV18Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV18 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 40A ·High Switching Speed APPLICATIONS ·High efficiency converters ·Motor drive control ·Switching regulator Absolute maximum ra
Inchange Semiconductor
Inchange Semiconductor
transistor
2BUV18(BUV18 / BUV19) NPN High Current Switching Transistors

w w w .d e e h s a t a . u t4 m o c
ST Microelectronics
ST Microelectronics
transistor
3BUV18Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

BUV18 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.
Seme LAB
Seme LAB
data
4BUV18Trans GP BJT NPN 60V 90A 3-Pin(2+Tab) TO-3

New Jersey Semiconductor
New Jersey Semiconductor
data
5BUV18XBipolar NPN Device in a Hermetically sealed TO3 Metal Package

BUV18X Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17
Seme LAB
Seme LAB
data


BUV Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1BUV10Silicon NPN Power Transistor

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 DESCRIPTION ·High Switching Speed ·High Current Capability APPLICATIONS ·Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCBO
Inchange Semiconductor
Inchange Semiconductor
datasheet BUV10 pdf
2BUV10NBipolar NPN Device in a Hermetically sealed TO3 Metal Package

BUV10N Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17
Seme LAB
Seme LAB
datasheet BUV10N pdf
3BUV1120 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV11/D SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A • Ver
Motorola  Inc
Motorola Inc
datasheet BUV11 pdf
4BUV11SITCHMODE Series NPN Silicon Power Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV11/D SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A • Ver
ON Semiconductor
ON Semiconductor
datasheet BUV11 pdf
5BUV12Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

BUV12 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.
Seme LAB
Seme LAB
datasheet BUV12 pdf
6BUV18Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV18 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 40A ·High Switching Speed APPLICATIONS ·High efficiency converters ·Motor drive control ·Switching regulator Absolute maximum ra
Inchange Semiconductor
Inchange Semiconductor
datasheet BUV18 pdf
7BUV18(BUV18 / BUV19) NPN High Current Switching Transistors

w w w .d e e h s a t a . u t4 m o c
ST Microelectronics
ST Microelectronics
datasheet BUV18 pdf



Esta página es del resultado de búsqueda del BUV18. Si pulsa el resultado de búsqueda de BUV18 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap