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Datasheet BUS50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BUS50 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUS50
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 125V(Min) ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Design |
 Inchange Semiconductor |
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| 4 | BUS50 | Bipolar NPN Device BUS50
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1.47 (0.058) 1.60 ( |
 Seme LAB |
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| 3 | BUS50 | 70 AMPERES NPN SILICON POWER TRANSISTOR 125 VOLTS (BVCEO) 350 WATTS 200 V (BVCES) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUS50/D
SWITCHMODE Series NPN Silicon Power Transistors
The BUS50 transistor is designed for low voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for battery switchmode |
 Motorola Inc |
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| 2 | BUS50 | NPN Silicon Power Transistors ON Semiconductort
SWITCHMODEt Series NPN Silicon Power Transistors
The BUS50 transistor is designed for low voltage, high–speed,
power switching in inductive circuits where fall time is critical. It is
particularly suited for battery SWITCHMODE applications such as:
• Switching Regulators
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 ON Semiconductor |
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