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Datasheet BUR52 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BUR52 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUR52
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 250V(Min) ·High Current Capability ·Low Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 25A
APPLICATIONS ·Designed for switching and linear a |
 Inchange Semiconductor |
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| 4 | BUR52 | HIGH CURRENT NPN SILICON TRANSISTOR ® BUR52
HIGH CURRENT NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR s MAINTAINS GOOD SWITCHING
PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE
APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION The BUR52 is a silicon Multiepitaxial Planar NPN trans |
 STMicroelectronics |
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| 3 | BUR52 | HIGH CURRENT NPN SILICON BUR52
MECHANICAL DATA Dimensions in mm(inches)
HIGH CURRENT NPN SILICON TRANSISTOR
6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
FEATURES
• FAST SWITCHING • HIGH PULSE POWER
22.23 (0.875) max.
38.61 (1.52) 39.12 (1.54)
29.9 (1.177) 30. |
 Seme LAB |
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| 2 | BUR52 | HIGH CURRENT NPN SILICON TRANSISTORS BUR52
HIGH CURRENT NPN SILICON TRANSISTORS
The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO VCBO VEBO |
 Comset Semiconductors |
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