Datasheet BUK9514-55A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BUK9514-55A	N-channel TrenchMOS logic level FET TO -22 0A B BUK9514-55A N-channel TrenchMOS logic level FET Rev. 02 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed	NXP Semiconductors

BUK9514- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BUK9514-55	TrenchMOS transistor Logic level FET Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance an	NXP Semiconductors
BUK9514-55	TrenchMOS transistor Logic level FET Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance an	NXP Semiconductors
BUK9514-30	TrenchMOS transistor Logic level FET Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance an	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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