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Datasheet BUK7514-55 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | BUK7514-55 | TrenchMOS transistor Standard level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral |
NXP Semiconductors |
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2 | BUK7514-55 | TrenchMOS transistor Standard level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral |
NXP Semiconductors |
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1 | BUK7514-55A | N-channel TrenchMOS standard level FET TO -22 0A B
BUK7514-55A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been desig |
NXP Semiconductors |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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