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Datasheet BSS80C Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | BSS80C | PNP Silicon Switching Transistors SMD Type
TransistIoCrs
PNP Silicon Switching Transistors
BSS80,BSS82
Features
High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage.
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-emi |
Kexin |
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4 | BSS80C | GENERAL PURPOSE TRANSISTOR )
BSS80B,C
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol vCEO vCBO vEBO
'C
THERMAL CHARACTERISTICS
Characteristic
*Total Devi |
Motorola Semiconductors |
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3 | BSS80C | PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) PNP Silicon Switching Transistors
BSS 80 BSS 82
High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 79, BSS 81 (NPN)
q
Type BSS 80 B BSS 80 C BSS 82 B BSS 82 C
Marking CHs CJs CLs CMs
Ordering Code (tape and reel) Q62702-S557 Q62702-S492 Q62702-S560 Q62702 |
Siemens Semiconductor Group |
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2 | BSS80C | PNP Silicon Switching Transistors BSS80, BSS82
PNP Silicon Switching Transistors
High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (NPN)
3
2 1
VPS05161
Type BSS80B BSS80C BSS82B BSS82C
Marking CHs CJs CLs CMs 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 3 |
Infineon Technologies AG |
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Número de pieza | Descripción | Fabricantes | |
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