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Datasheet BSS123LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BSS123LT1 | TMOS FET Transistor(N-Channel) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BSS123LT1/D
TMOS FET Transistor
N–Channel
3 DRAIN 1 GATE 2 SOURCE
BSS123LT1
Motorola Preferred Device
®
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain C |
 Motorola Inc |
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| 2 | BSS123LT1 | Power MOSFET 170 mAmps/ 100 Volts BSS123LT1
Preferred Device
Power MOSFET 170 mAmps, 100 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Drain Current Continuous (Note 1.) Pulsed (Note 2.) Symbol VDSS VGS VGSM ID IDM Value 100 ±20 ± |
 ON Semiconductor |
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| 1 | BSS123LT1G | Power MOSFET ( Transistor ) BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts
N−Channel SOT−23
Features http://onsemi.com
• AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Drain−Source Voltage Gate−Source Voltage − Continuo |
ON Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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