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Datasheet BSP52 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | BSP52 | NPN Darlington Transistor BSP52
BSP52
NPN Darlington Transistor
• This device is designed for applications requiring extremly high current gain at collector currents to 500mA. • Sourced from process 03.
2 1 4
3
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol V |
 Fairchild Semiconductor |
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| 8 | BSP52 | NPN Darlington transistors DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
BSP50; BSP51; BSP52 NPN Darlington transistors
Product specification Supersedes data of 1997 Apr 22 1999 Apr 23
Philips Semiconductors
Product specification
NPN Darlington transistors
FEATURES • High current (max. 1 A) • Low vo |
 NXP Semiconductors |
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| 7 | BSP52 | NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) NPN Silicon Darlington Transistors
BSP 50 … BSP 52
High collector current q Low collector-emitter saturation voltage q Complementary types: BSP 60 … BSP 62 (PNP)
q
Type BSP 50 BSP 51 BSP 52
Marking BSP 50 BSP 51 BSP 52
Ordering Code (tape and reel) Q62702-P1163 Q62702-P1164 Q62702-P1165
Pi |
 Siemens Semiconductor Group |
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| 6 | BSP52 | NPN Silicon Darlington Transistors NPN Silicon Darlington Transistors
• High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 - BSP62 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101
BSP50-BSP52
43 2
1
Type BSP50 BSP51 BSP52
Marking BSP50 1=B BSP51 1=B BSP52 |
 Infineon Technologies AG |
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