Datasheet BS616UV2011DC Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BS616UV2011DC	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit DESCRIPTION BS616UV2011 • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0 V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMOS standby current Vc	Brilliance Semiconductor

BS616UV201 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BS616UV2011TI	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit DESCRIPTION BS616UV2011 • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0 V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMO	Brilliance Semiconductor
BS616UV2011TC	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit DESCRIPTION BS616UV2011 • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0 V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMO	Brilliance Semiconductor
BS616UV2011EI	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit DESCRIPTION BS616UV2011 • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0 V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMO	Brilliance Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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