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Datasheet BS107 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 15 | BS107 | N-Channel Enhancement-Mode MOS Transistors Siliconix
VN2010L/BS107
NĆChannel EnhancementĆMode MOS Transistors
Product Summary
Part Number VN2010L BS107
V(BR)DSS Min (V) 200
rDS(on) Max (W)
10 @ VGS = 4.5 V 28 @ VGS = 2.8 V
VGS(th) (V) 0.8 to 1.8 0.8 to 3
ID (A) 0.19 0.12
Features
Benefits
D Low OnĆResistance: 6 W D Secondary Br |
 TEMIC |
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| 14 | BS107 | TMOS Switching(N-Channel-Enhancement) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS107/D
TMOS Switching
N–Channel — Enhancement
2 GATE
1 DRAIN
BS107 BS107A
®
3 SOURCE
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Cont |
 Motorola Inc |
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| 13 | BS107 | N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BS107 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
FEATURES • Direct interf |
 NXP Semiconductors |
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| 12 | BS107 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
 Siemens Semiconductor Group |
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