Datasheet BFR360F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BFR360F	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • Low noise amplifier for low current applications • Collector design supports 5 V supply voltage • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package with visible le	Infineon Technologies AG	transistor

BFR Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BFR106	NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors NPN 5 GHz wideband transistor Product specification BFR106 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended f	NXP Semiconductors	transistor
2	BFR106	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers) BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin	Siemens Semiconductor Group	transistor
3	BFR106	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply volta	Infineon Technologies AG	transistor
4	BFR106	Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB	New Jersey Semiconductor	data
5	BFR14B	NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz	Siemens Semiconductor Group	transistor
6	BFR14C	NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz	Siemens Semiconductor Group	transistor
7	BFR180	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration	Siemens Semiconductor Group	transistor
8	BFR180	NPN Silicon RF Transistor BFR180 NPN Silicon RF Transistor For low-power amplifiers in mobile 3 communication systems (pager) at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz F = 2.1 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR180 Maximum Rati	Infineon Technologies AG	transistor
9	BFR180W	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuratio	Siemens Semiconductor Group	transistor

Esta página es del resultado de búsqueda del BFR360F. Si pulsa el resultado de búsqueda de BFR360F se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap