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Datasheet BFR183 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | BFR183 | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector current from 2 mA to 30mA) BFR 183
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 183 RHs Q62702 |
Siemens Semiconductor Group |
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7 | BFR183 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
BFR183
ESD (Electrostatic disch |
Infineon Technologies AG |
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6 | BFR183T | Silicon NPN Planar RF Transistor BFR183T/BFR183TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.
Features
D Low noise figure D High power gain
1 1
13 581 9 |
Vishay Telefunken |
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5 | BFR183T | NPN Silicon RF Transistor BFR183T
NPN Silicon RF Transistor Preliminary data
For low-noise, high-gain broadband amplifiers at
3
collector currents from 2 mA to 30 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR183T
Maximum Ratings |
Infineon Technologies AG |
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Número de pieza | Descripción | Fabricantes | |
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