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Datasheet BFP183 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
9 | BFP183 | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) BFP 183
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 183 RHs Q627 |
Siemens Semiconductor Group |
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8 | BFP183 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
3 4
BFP183
2 1
ESD (Electrosta |
Infineon Technologies AG |
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7 | BFP183R | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) BFP 183R
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 183R RHs Q6 |
Siemens Semiconductor Group |
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6 | BFP183R | NPN Silicon RF Transistor BFP183R
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 28 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP183R
Maximum Ratings Parameter
Marking RHs 1=E
Pin C |
Infineon Technologies AG |
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Número de pieza | Descripción | Fabricantes | |
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