Datasheet BCV49 Equivalent ( PDF ) - Transistor

SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 3 SEPTEMBER 1995 COMPLEMENTARY TYPE PARTMARKING DETAILS BCV48 EG BCV49 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV29; BCV49 NPN Darlington transistors Product speci cation Supersedes data of 1997 Apr 21 1999 Apr 08 Philips Semiconductors Product speci cation NPN Darlington transistors FEATURES High current (max. 500 mA) Low voltage (max. 60 V) High DC current gain (min. 20000). APPLICATIONS Preamplifier input applications. DESCRIPTION NPN s

NPN Silicon Darlington Transistors BCV 29 BCV 49 For general AF applications q High collector current q High current gain q Complementary types: BCV 28, BCV 48 (PNP) q Type BCV 29 BCV 49 Marking EF EG Ordering Code (tape and reel) Q62702-C1853 Q62702-C1832 Pin Configuration 1 2 3 4 B C E C Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-b

NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV28, BCV48 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 BCV29, BCV49 1 2 3 2 Type BCV29 BCV49 Marking EF EG Maximum Ratings Parameter Collector-emitter voltage BCV29 BCV49 Collector-base voltage BCV29 BCV49 Emitter-base voltage Collector