Datasheet BCR400 Equivalent ( PDF )

Silicon Discrete Components Application Considerations for the Integrated Bias Control Circuits BCR400R and BCR400W Application Note No. 014 Figure 1 RF Transistor Controlled by BCR400 Operating Point BCR400 stabilizes the operating current (i.e. IC or ID), the collector (or drain) voltage depends on the supply voltage: VCE = VS - 0.65 V The voltage drop of approximately 0.65 V on Rext (i.e

BCR 400R Active Bias Controller Characteristics Supplies stable bias current even at low battery voltage and extreme ambient temperature variation Low voltage drop of 0.7V Application notes Stabilizing bias current of NPN transistors and FETs from from less than 0.2mA up to more than 200mA Ideal supplement for SIEGET and other RF transistors also usable as current source up to 5mA Type M

Silicon Discrete Components Application Considerations for the Integrated Bias Control Circuits BCR400R and BCR400W Application Note No. 014 Figure 1 RF Transistor Controlled by BCR400 Operating Point BCR400 stabilizes the operating current (i.e. IC or ID), the collector (or drain) voltage depends on the supply voltage: VCE = VS - 0.65 V The voltage drop of approximately 0.65 V on Rext (i.e

BCR 400W Active Bias Controller Characteristics Supplies stable bias current even at low battery voltage and extreme ambient temperature variation Low voltage drop of 0.7V Application notes Stabilizing bias current of NPN transistors and FETs from from less than 0.2mA up to more than 200mA Ideal supplement for SIEGET and other RF transistors also usable as current source up to 5mA Type M

BCR400W Active Bias Controller Characteristics Supplies stable bias current even at low battery 3 4 voltage and extreme ambient temperature variation Low voltage drop of 0.7V 2 Application notes Stabilizing bias current of NPN transistors 1 4 3 VPS05605 and FET's from less than 0.2mA up to more than 200mA Ideal supplement for Sieget and other transistors also usable as current source up