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Datasheet BCR320UE6327 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BCR320UE6327 | LED Driver LED Driver BCR 320U E6327 / BCR 321U E6327
Datasheet
Revision 2.1, 2015-01-28
Power Management & Multimarket
Edition 2015-01-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given in this document s |  Infineon Technologies | driver |
BCR Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BCR08AM | LOW POWER USE PLANAR PASSIVATION TYPE
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1  RENESAS data | | |
| 2 | BCR08AM-12 | Triac Low Power Use BCR08AM-12
Triac
Low Power Use
REJ03G0343-0100 Rev.1.00 Aug.20.2004
Features
• IT (RMS) : 0.8 A • VDRM : 600 V • IRGTI, IRGTⅢ : 5 mA • Planar Passivation Type
Outline
TO-92
2
1. T1 Terminal 2. T2 Terminal 3. Gate Terminal
3 1 1 3 2
Applications
Electric fan, air cle  Renesas Technology triac | | |
| 3 | BCR08AM-14 | LOW POWER USE PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉
BCR08AM-14
LOW POWER USE PLANAR PASSIVATION TYPE
BCR08AM-14
OUTLINE DRAWING
φ 5.0 MAX.
Dimensions in mm
4.4
VOLTAGE CLASS TYPE NAME
T1 TERMINAL T2 TERMINAL GATE TERMINAL
CIRCUMSCRIBE CIRCLE φ 0.7
1.25 1.25
1.3
12.5 MIN.
5.0 MAX.  Mitsubishi Electric Semiconductor data | | |
| 4 | BCR08AM-14A | Triac Low Power Use BCR08AM-14A
Triac
Low Power Use
REJ03G1200-0200 Rev.2.00 Nov 30, 2007
Features
• IT (RMS) : 0.8 A • VDRM : 700 V • IFGT I, IRGT I, IRGT III : 5 mA • Planar Passivation Type
Outline
RENESAS Package code: PRSS0003EA-A (Package name: TO-92)
2
1. T1 Terminal 2. T2 Terminal Renesas Technology triac | | |
| 5 | BCR08AS | TRIAC BCR08AS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions in mm
4.4±0.1 1.6±0.2
1.5±0.1
0.8 MIN 2.5±0.1 3.9±0.3
123
• IT (RMS) ..................................................................... 0.8A •  Mitsubishi triac | | |
| 6 | BCR08AS | TRIAC MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR08AS
OUTLINE DRAWING
Dimensions in mm
4.4±0.1 1.6±0.2
1.5±0.1
2.5±0.1
1
0.8 MIN
2
3
0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL  Powerex Power Semiconductors triac | | |
| 7 | BCR08AS-12 | TRIAC
BCR08AS-12
Triac
Low Power Use
REJ03G0292-0200 Rev.2.00 Mar 22, 2007
Features
• • • • IT (RMS) : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT : 5 mA IFGT : 10 mA • Non-Insulated Type • Planar Passivation Type • Completed Pb Free
Outline
RENESAS Package code: PLZZ0004CA- Renesas Technology triac | | |
| 8 | BCR08AS-8 | TRIAC MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR08AS-8
OUTLINE DRAWING
Dimensions in mm
4.4±0.1 1.6±0.2
1.5±0.1
2.5±0.1
1
2
3
0.8 MIN
0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TER Mitsubishi Electric Semiconductor triac | | |
| 9 | BCR08AS-8 | TRIAC MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR08AS-8
OUTLINE DRAWING
Dimensions in mm
4.4±0.1 1.6±0.2
1.5±0.1
2.5±0.1
1
2
3
0.8 MIN
0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TER Powerex Power Semiconductors triac | |
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