Datasheet BC859C Equivalent ( PDF ) - Transistor

PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 h- and 15 kH- Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1Pb-containing package may be available upon special request BC856...-BC860... 1 2007-09-25 Type BC856A BC856B BC856B

SMD Type PNP Transistors BC859~BC860 (KC859~KC860) Transistors - Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● NPN complements: BC849 and BC850. +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 -0.1 - Absolute Maximum Ra

BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL Collector Base Voltage BC856 BC857 BC858, BC859 -VCBO Collector Emitter Voltage BC856 BC857 BC858, BC859 -VCEO Emitter Base Voltage -VEBO Collector Current -IC Peak Collector Current -ICM

BC859 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the NPN transistor BC849 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta=25 OC) Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Volt