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Descripción |
Fabr. |
PDF |
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BC450 |
High Voltage Transistors
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC450, D
High Voltage Transistors
PNP Silicon
COLLECTOR 1
BC450,A
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
100 100 5.0 300 6
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PNP SILICON TRANSISTOR
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PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Continental Device India Limited
An IS, ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
IS, ISO 9002 Lic# QSC, L- 000019.2
BC 446, A, B BC 448, A, B BC 450, A, B
TO-92 Plastic Package
General Purpose High Voltage Transistors.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Emitter Voltage
VCEO
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HIGH VOLTAGE TRANSISTORS
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25 °C Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Amb
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BC450A |
High Voltage Transistors
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC450, D
High Voltage Transistors
PNP Silicon
COLLECTOR 1
BC450,A
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
100 100 5.0 300 6
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