Datasheet BC338 Equivalent ( PDF ) - Amplifier

BC337, 338 BC337, 338 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC327, BC328 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCES Collector-Emitter Voltage : BC337 : BC338 VCEO Collector-Emitter Voltage : BC337 : BC338 VEBO IC PC TJ TSTG Emitter-Base Voltage C

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC337, D Amplifier Transistors NPN Silicon COLLECTOR 1 BC337,-16,-25,-40 BC338,-16,-25,-40 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEB

BC337, BC338 Small Signal Transistors (NPN) TO-92 .181 (4.6) .142 (3.6) min..492 (12.5) .181 (4.6) max. .022 (0.55) .098 (2.5) CE B Dimensions in inches and (millimeters) FEATURES NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. These types are also available subdi- vided into three group

NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP) BC 337 BC 338 2 3 1 Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 Marking Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3