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Datasheet AT49LV4096 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
13 | AT49LV4096 | 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory Features
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Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 2 |
ATMEL Corporation |
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12 | AT49LV4096-12RC | 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory Features
• • • • • • • • • •
Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 2 |
ATMEL Corporation |
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11 | AT49LV4096-12RI | 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory Features
• • • • • • • • • •
Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 2 |
ATMEL Corporation |
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10 | AT49LV4096-12TC | 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory Features
• • • • • • • • • •
Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 2 |
ATMEL Corporation |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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