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Datasheet AS4C4M4 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | AS4C4M4 | 16M FPM DRAM 16 Me g FPM DRAM Meg
Austin Semiconductor, Inc. 4M x 4 CMOS DRAM
WITH FAST PAGE MODE, 5 VOLT
AVAILABLE AS MILITARY SPECIFICATIONS
• MIL-STD-883
Vcc DQ0 DQ1 W RAS NC
AS4C4M4
PIN ASSIGNMENT (Top View)
24 Pin TSOP (DG)
1 2 3 4 5 6 24 23 22 21 20 19 Vss DQ3 DQ2 CAS OE A9
FEATURES
• Fast Page Mode |
Austin Semiconductor |
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5 | AS4C4M4E0 | 4M x 4 CMOS DRAM w
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Alliance Semiconductor |
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4 | AS4C4M4E1 | 4M x 4 CMOS DRAM May 2001
®
AS4C4M4E1
4M×4 CMOS DRAM (EDO) family Features
• Organization: 4,194,304 words × 4 bits • High speed
- 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time
• TTL-compatible, three-state I/O • JEDEC standard package
- 300 mil, 24/26-pin SO |
Alliance Semiconductor |
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3 | AS4C4M4E1Q | 4M X 4 CMOS Quad CAS DRAM (EDO) family
March 2001
®
AS4C4M4EOQ AS4C4M4E1Q
4M ✕ 4 CMOS QuadCAS DRAM (EDO) family Features
• Organization: 4,194,304 words × 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption - Active: 495 m |
ALSC |
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Número de pieza | Descripción | Fabricantes | |
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