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Datasheet APT1002RCN Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | APT1002RCN | N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-254
G S
APT1002RCN 1000V 5.5A 2.00Ω
TM
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APT1002RCN UNIT Volts Amps
1000 5.5 22 ±30 |
 Advanced Power Technology |
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| 1 | APT1002RCN | (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET
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Advanced Power Technology |
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