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Datasheet APM2301 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | APM2301 | P-Channel Enhancement Mode MOSFET APM2301
P-Channel Enhancement Mode MOSFET
Features
• -20V/-2.8A , RDS(ON)=72mΩ(typ.) @ VGS=-10V
RDS(ON)=100mΩ(typ.) @ VGS=-4.5V
Pin Description
D
• • •
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package
G S
Applications
•
Power Management in |
 Etc |
 |
| 4 | APM2301 | P-Channel Enhancement Mode MOSFET APM2301
P-Channel Enhancement Mode MOSFET
Features
Pin Description
•
-20V/-2.8A
,
RDS(ON)=72mΩ(typ.)
@
V =-10V GS
RDS(ON)=100mΩ(typ.)
@
V =-4.5V GS
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• SOT-23 Package
Applications
D
GS Top View |
 Anpec Electronics |
|
| 3 | APM2301A | P-Channel Enhancement Mode MOSFET APM2301A
Features
• -20V/-2.8A,
RDS(ON)=72mΩ(typ.) @ VGS=-10V RDS(ON)=98mΩ(typ.) @ VGS=-4.5V
• Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
P-Channel Enhancement Mode MOSFET
Pin Description
D S G
Top View of SOT-23
S
Applic |
Etc |
|
| 2 | APM2301A | P-Channel Enhancement Mode MOSFET APM2301A
Features
• -20V/-2.8A,
RDS(ON)=72mΩ(typ.) @ VGS=-10V RDS(ON)=98mΩ(typ.) @ VGS=-4.5V
• Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
P-Channel Enhancement Mode MOSFET
Pin Description
D S G
Top View of SOT-23
S
Applic |
Anpec Electronics |
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