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Datasheet AP4435 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | AP4435 | 30 P-Channel Enhancement-Mode MOSFET 30 P-Channel Enhancement-Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V, [email protected] = 21m RDS(ON), [email protected], [email protected] = 35m
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
AP4435
Preliminary Data Sheet
S0-8
Internal Schematic Diagram Drain
Gate
Top View
Source |
 Advanced Power Electronics |
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| 11 | AP4435D | ENHANCEMENT MODE POWER MOSFET AP4435D
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Fast Switching Speed ▼ PDIP-8 Package
G D D D D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
S S S
-30V 20mΩ -9A
PDIP-8
Description
The Advanced Power MOSFETs from APEC provide the designer w |
Advanced Power Electronics |
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| 10 | AP4435GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET AP4435GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 20mΩ -40A
Description
The TO-252 package is widely preferred for all com |
Advanced Power Electronics |
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| 9 | AP4435GH-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET AP4435GH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 20mΩ -40A
Description
Advanced Power |
Advanced Power Electronics |
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