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Datasheet AON2801 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | AON2801 | Dual P-Channel Enhancement Mode Field Effect Transistor AON2801
General Description
Dual P-Channel Enhancement Mode Field Effect Transistor
The AON2801/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. |
Freescale |
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1 | AON2801 | Dual P-Channel Enhancement Mode Field Effect Transistor AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON2801/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO |
Alpha & Omega Semiconductors |
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