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Datasheet AM28F512 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 242 | AM28F512 | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL
Am28F512
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s |
 Advanced Micro Devices |
 |
| 241 | AM28F512-120EC | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL
Am28F512
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s |
Advanced Micro Devices |
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| 240 | AM28F512-120ECB | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL
Am28F512
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s |
Advanced Micro Devices |
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| 239 | AM28F512-120EE | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL
Am28F512
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s |
Advanced Micro Devices |
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| Número de pieza | Descripción | Fabricantes | |
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