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Datasheet 3N170 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
13N170N-Channel Enhancement Mode MOSFET Switch

N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 / 3N171 FEATURES HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in actu
Calogic  LLC
Calogic LLC
mosfet
23N170N-CHANNEL MOSFET ENHANCEMENT MODE

3N170 3N171 Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Con
Linear Technology
Linear Technology
mosfet
33N170N-CHANNEL MOSFET ENHANCEMENT MODE

3N170 3N171 Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Con
Linear Integrated Systems
Linear Integrated Systems
mosfet
43N170MOSFETs Switching

Motorola Semiconductor
Motorola Semiconductor
mosfet
53N170High Speed Switch

3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. (See Pac
Micross
Micross
data


3N1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
13N100EMTB3N100E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package whi
Motorola Semiconductors
Motorola Semiconductors
datasheet 3N100E pdf
23N121Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
datasheet 3N121 pdf
33N123Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
datasheet 3N123 pdf
43N128MOSFET AMPLIFIER

MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current @Total Device Dissipation T/^ = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vDs vDg vgs id Pd Tj, Tstg Value + 20 + 20 ±10 50 330 2.2 -65 to +175 Unit Vdc Vdc Vdc
Motorola Semiconductors
Motorola Semiconductors
datasheet 3N128 pdf
53N128Silicon MOS Transistor

General Electric Solid State
General Electric Solid State
datasheet 3N128 pdf
63N128Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
datasheet 3N128 pdf
73N129Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
datasheet 3N129 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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