DataSheet.es    


Datasheet 2STBN15D100 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12STBN15D100Power Bipolar Low voltage NPN power Darlington transistor

2STBN15D100 Low voltage NPN power Darlington transistor Features ■ ■ ■ Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode 3 1 TAB Application ■ Linear and switching industrial equipment D²PA
ST Microelectronics
ST Microelectronics
transistor


2ST Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12ST1480(2ST1480 / 2ST2480) Complementary power transistors

2ST1480 2ST2480 Complementary power transistors Preliminary data Features ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Fully insulated package 2 1 Applications ■ ■ ■ ■ 3 Voltage regulation Computer and peripheral equ
ST Microelectronics
ST Microelectronics
transistor
22ST2121High power PNP epitaxial planar bipolar transistor

2ST2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2ST5949 Fast switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ 1 2 TO-3 Audio power
STMicroelectronics
STMicroelectronics
transistor
32ST2480(2ST1480 / 2ST2480) Complementary power transistors

2ST1480 2ST2480 Complementary power transistors Preliminary data Features ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Fully insulated package 2 1 Applications ■ ■ ■ ■ 3 Voltage regulation Computer and peripheral equ
ST Microelectronics
ST Microelectronics
transistor
42ST5949High power NPN epitaxial planar bipolar transistor

2ST5949 High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2ST2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ 1 2 TO-3 Audio power amplifier Descri
STMicroelectronics
STMicroelectronics
transistor
52STA1694High power PNP epitaxial planar bipolar transistor

2STA1694 High power PNP epitaxial planar bipolar transistor Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P
STMicroelectronics
STMicroelectronics
transistor
62STA1695High power PNP epitaxial planar bipolar transistor

2STA1695 High power PNP epitaxial planar bipolar transistor General features ■ ■ ■ ■ Preliminary data High breakdown voltage VCEO = -140V Complementary to 2STC4468 Typical ft =20MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P De
ST Microelectronics
ST Microelectronics
transistor
72STA1943High power PNP epitaxial planar bipolar transistor

2STA1943 High power PNP epitaxial planar bipolar transistor Features ■ ■ ■ ■ High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHz 3 Application ■ Audio power amplifier 1 2 TO-264 Description This device is a NPN
STMicroelectronics
STMicroelectronics
transistor
82STA1962High power PNP epitaxial planar bipolar transistor

2STA1962 High power PNP epitaxial planar bipolar transistor Preliminary Data Features ■ ■ ■ ■ High breakdown voltage VCEO > -230V Complementary to 2STC5242 Fast-switching speed Typical fT= 30MHz 3 2 1 Application Audio power amplifier TO-3P Description This device is
ST Microelectronics
ST Microelectronics
transistor
92STA2120High power PNP epitaxial planar bipolar transistor

2STA2120 High power PNP epitaxial planar bipolar transistor Preliminary data Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STC5948 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power a
STMicroelectronics
STMicroelectronics
transistor



Esta página es del resultado de búsqueda del 2STBN15D100. Si pulsa el resultado de búsqueda de 2STBN15D100 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap