Datasheet 2SK409 Equivalent ( PDF ) - MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4090 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC, DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID =

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4091 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC, DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 13.0 mΩ MAX. (VGS = 10 V, ID =

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4092 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 10 A) Low gate charge QG =

2SK4093 Silicon N Channel MOS FET High Speed Power Switching Features Capable of 2.5V gate drive Low drive current Low on-resistance Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) G 321 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak c