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Datasheet 2SK405 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SK405 | Silicon N Channel MOS type |
 Toshiba America Electronic Components |
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| 4 | 2SK4057 | MOS FIELD EFFECT TRANSISTOR DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4057
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with syn |
 NEC |
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| 3 | 2SK4058 | MOS FIELD EFFECT TRANSISTOR DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4058
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with syn |
NEC |
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| 2 | 2SK4059TK | Silicon N Channel Junction Type 2SK4059TK
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK4059TK
For ECM
• Application for compact ECM
0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05
Unit: mm
Absolute Maximum Ratings (Ta=25°C)
0.45 0.45 1.4±0.05
Characteristic
Symbol VGDO IG |
 Toshiba Semiconductor |
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