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Datasheet 2SK389 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SK389 | N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS) |
 Toshiba Semiconductor |
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| 4 | 2SK3891-01R | Power MOSFET ( Transistor ) 2SK3891-01R
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200407
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC conver |
 Fuji Semiconductors |
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| 3 | 2SK3892 | Silicon N-channel power MOSFET This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3892
Silicon N-channel power MOSFET
For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply Features
Gate-source surrender voltage VGSS : |
 Panasonic |
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| 2 | 2SK3899 | SWITCHING N-CHANNEL POWER MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3899
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3899-ZK PACKAGE TO-263 (MP-25ZK)
FEATURES
• Super low on-sta |
 NEC |
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