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Datasheet 2SK386 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SK386 | Transistor |
 ETC |
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| 3 | 2SK3863 | Switching Regulator Applications
2SK3863
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3863
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = |
 Toshiba Semiconductor |
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| 2 | 2SK3868 | Switching Regulator Applications
2SK3868
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3868
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 |
Toshiba Semiconductor |
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| 1 | 2SK3869 | Switching Regulator Applications
2SK3869
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3869
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = |
Toshiba Semiconductor |
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