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Datasheet 2SK369 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | 2SK369 | Silicon N Channel Junction Type Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK369
2SK369
For Low Noise Audio Amplifier Applications
Unit: mm
· Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA) · High breakdown volt |
 Toshiba Semiconductor |
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| 12 | 2SK3690-01 | N-CHANNEL SILICON POWER MOSFET 2SK3690-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220AB 200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Pow |
 Fuji Electric |
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| 11 | 2SK3691-01MR | N-CHANNEL SILICON POWER MOSFET 2SK3691-01MR
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F 200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Po |
Fuji Electric |
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| 10 | 2SK3692-01 | N-CHANNEL SILICON POWER MOSFET 2SK3692-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
200305
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC c |
Fuji Electric |
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