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Datasheet 2SK365 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | 2SK365 | Silicon N Channel Junction Type Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications
2SK365
Unit: mm
· High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) · Low RDS (ON) |
 Toshiba Semiconductor |
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| 11 | 2SK3650-01L | N-CHANNEL SILICON POWER MOSFET 2SK3650-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC conv |
 Fuji Electric |
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| 10 | 2SK3650-01S | N-CHANNEL SILICON POWER MOSFET 2SK3650-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC conv |
Fuji Electric |
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| 9 | 2SK3650-01SJ | N-CHANNEL SILICON POWER MOSFET 2SK3650-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC conv |
Fuji Electric |
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