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Datasheet 2SK357 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | 2SK357 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK357
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 150V(Min) ·Fast Switching Speed
APPLICATIONS ·High speed power switching applications. ·High Drain Current. ·High forward tra |
 Inchange Semiconductor |
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| 11 | 2SK357 | High Speed / High Voltage Switching Applications / DC-DC Converter |
 Toshiba |
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| 10 | 2SK3570 | Switching N-Channel Power MOS FET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3570
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with syn |
 NEC Electronics |
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| 9 | 2SK3571 | Switching N-Channel Power MOS FET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3571
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with syn |
NEC Electronics |
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