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Datasheet 2SK316 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
13 | 2SK316 | SI N CHANNEL JUCTION |
Panasonic Semiconductor |
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12 | 2SK3160 | Silicon N Channel MOS FET 2SK3160
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =130 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1085-0300 (Previous: ADE-208-751A)
Rev.3.00 Sep 07, 2005
RENESAS Package code: PRSS0003AD-A |
Renesas |
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11 | 2SK3160 | Silicon N Channel MOS FET High Speed Power Switching 2SK3160
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-751 (Z) 1st. Edition February 1999 Features
• Low on-resistance R DS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3 |
Hitachi Semiconductor |
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10 | 2SK3161 | Silicon N Channel MOS FET 2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =90 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1086-0300 (Previous: ADE-208-734A)
Rev.3.00 Sep 07, 2005
RENESAS Package code: |
Renesas |
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Número de pieza | Descripción | Fabricantes | |
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